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IDH08G65C6XKSA1
影像僅供參考,以產品規格為準

IDH08G65C6XKSA1

型號描述:
碳化矽肖特基二極管 SIC DIODES
型號:
IDH08G65C6XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
500
1+NT$118.755
10+NT$93.1613
25+NT$66.885
100+NT$60.7425
500+NT$56.6475
1000+NT$43.68
起訂量:1倍增量:1
價格:NT$118.755數量:

合計:NT$119

Packaging
Tube
Package / Case
TO-220-2
Mounting Type
Through Hole
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Technology
SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F
401pF @ 1V, 1MHz
Current - Average Rectified (Io)
20A
Supplier Device Package
PG-TO220-2
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
650 V
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 8 A
Current - Reverse Leakage @ Vr
27 µA @ 420 V
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