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IMT40R036M2HXTMA1
影像僅供參考,以產品規格為準

IMT40R036M2HXTMA1

型號描述:
N-Channel 400 V 7.6A (Ta), 50A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount PG-HSOF-8-2
SIC-MOS
型號:
IMT40R036M2HXTMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2000+NT$110.2155
起訂量:2000倍增量:1
價格:NT$110.2155數量:

合計:NT$220431

Packaging
Tape & Reel (TR)
Package / Case
8-PowerSFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs
45.7mOhm @ 11.1A, 18V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id
5.6V @ 4mA
Supplier Device Package
PG-HSOF-8-2
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Vgs (Max)
+23V, -7V
Drain to Source Voltage (Vdss)
400 V
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1170 pF @ 200 V
Qualification
-
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