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IMT65R107M1HXUMA1
影像僅供參考,以產品規格為準

IMT65R107M1HXUMA1

型號描述:
650 V Surface Mount PG-HSOF-8-2
SILICON CARBIDE MOSFET
型號:
IMT65R107M1HXUMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$200.694
10+NT$135.2569
100+NT$98.2766
500+NT$84.1917
起訂量:1倍增量:1
價格:NT$200.694數量:

合計:NT$201

Packaging
Tape & Reel (TR)
Package / Case
8-PowerSFN
Mounting Type
Surface Mount
Operating Temperature
-
Technology
SiCFET (Silicon Carbide)
FET Type
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
FET Feature
-
Power Dissipation (Max)
-
Vgs(th) (Max) @ Id
-
Supplier Device Package
PG-HSOF-8-2
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
-
Drain to Source Voltage (Vdss)
650 V
Qualification
-
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