IMZA65R020M2HXKSA1
- 型號描述:
- N-Channel 650 V 83A (Tc) 273W (Tc) Through Hole PG-TO247-4-8
SILICON CARBIDE MOSFET
- 型號:
- IMZA65R020M2HXKSA1
- 品牌:
- Infineon Technologies
- 交期:
- 5-8工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$440.9828 |
| 10+ | NT$348.2827 |
| 30+ | NT$321.211 |
| 120+ | NT$297.0489 |
| 270+ | NT$286.7098 |
| 510+ | NT$280.0987 |
| 1020+ | NT$274.1199 |
起訂量：1倍增量：1
價格:NT$440.9828數量:
合計:NT$441
- Packaging
- Tube
- Package / Case
- TO-247-4
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- FET Type
- N-Channel
- Current - Continuous Drain (Id) @ 25°C
- 83A (Tc)
- Rds On (Max) @ Id, Vgs
- 18mOhm @ 46.9A, 20V
- FET Feature
- -
- Power Dissipation (Max)
- 273W (Tc)
- Vgs(th) (Max) @ Id
- 5.6V @ 9.5mA
- Supplier Device Package
- PG-TO247-4-8
- Grade
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 20V
- Vgs (Max)
- +23V, -7V
- Drain to Source Voltage (Vdss)
- 650 V
- Gate Charge (Qg) (Max) @ Vgs
- 57 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds
- 2038 pF @ 400 V
- Qualification
- -
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- EC350V-04P
- NUCLEO-C071RB
- MAX5362LEUK+T
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