IPB043N10NF2SATMA1
- 型號描述:
- MOSFET TRENCH >=100V
- 型號:
- IPB043N10NF2SATMA1
- 品牌:
- Infineon Technologies
- 交期:
- 5-8工作天
- 原廠包裝量:
- 800
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$76.7813 |
| 10+ | NT$57.6713 |
| 100+ | NT$41.2913 |
| 250+ | NT$40.95 |
| 500+ | NT$37.1963 |
| 800+ | NT$31.5998 |
| 2400+ | NT$27.9484 |
起訂量：1倍增量：1
價格:NT$76.7813數量:
合計:NT$77
- Packaging
- Tape & Reel (TR)
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- FET Type
- N-Channel
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta), 135A (Tc)
- Rds On (Max) @ Id, Vgs
- 4.35mOhm @ 80A, 10V
- FET Feature
- -
- Power Dissipation (Max)
- 3.8W (Ta), 167W (Tc)
- Vgs(th) (Max) @ Id
- 3.8V @ 93µA
- Supplier Device Package
- PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100 V
- Gate Charge (Qg) (Max) @ Vgs
- 85 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 4000 pF @ 50 V
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