IPB120N06S4-H1
- 型號描述:
- MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
- 型號:
- IPB120N06S4-H1
- 品牌:
- Infineon Technologies
- 交期:
- 5-8工作天
- 原廠包裝量:
- 1000
- Base Part Number
- IPB120
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- PG-TO263-3-2
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Power Dissipation (Max)
- 250W (Tc)
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 21900pF @ 25V
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 270nC @ 10V
- Vgs(th) (Max) @ Id
- 4V @ 200µA
- Rds On (Max) @ Id, Vgs
- 2.4mOhm @ 100A, 10V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- FET Type
- N-Channel
- Part Status
- Active
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, OptiMOS™
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