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IPD30N06S215ATMA2
影像僅供參考,以產品規格為準

IPD30N06S215ATMA2

型號描述:
N-Channel 55 V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 55V 30A TO252-31
型號:
IPD30N06S215ATMA2
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2500+NT$17.3286
5000+NT$16.6993
起訂量:2500倍增量:1
價格:NT$17.3286數量:

合計:NT$43322

Packaging
Tape & Reel (TR)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
14.7mOhm @ 30A, 10V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Vgs(th) (Max) @ Id
4V @ 80µA
Supplier Device Package
PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
55 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1485 pF @ 25 V
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