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IPD60R600E6ATMA1
影像僅供參考,以產品規格為準

IPD60R600E6ATMA1

型號描述:
N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 600V 7.3A TO252
型號:
IPD60R600E6ATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2500+NT$16.206
5000+NT$15.445
起訂量:2500倍增量:1
價格:NT$16.206數量:

合計:NT$40515

Packaging
Tape & Reel (TR)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 2.4A, 10V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Vgs(th) (Max) @ Id
3.5V @ 200µA
Supplier Device Package
PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
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