我的購物車0
購物車中還沒有商品,趕快選購吧!
首頁 > MURATA代理商 > DFE252012F-1R0M=P2
DFE252012F-1R0M=P2
影像僅供參考,以產品規格為準

DFE252012F-1R0M=P2

型號描述:
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
型號:
DFE252012F-1R0M=P2
品牌:
MURATA
交期:
10-16工作天
原廠包裝量:
1+NT$66.5937
10+NT$36.9853
50+NT$19.2505
100+NT$14.0463
500+NT$12.9347
1000+NT$12.0758
2000+NT$11.7726
4000+NT$11.5705
起訂量:1倍增量:1
價格:NT$66.5937數量:

合計:NT$67

Packaging
Tape & Reel (TR)
Tolerance
±20%
Features
Flat Wire
Package / Case
1008 (2520 Metric)
Size / Dimension
0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type
Surface Mount
Shielding
Shielded
Type
Drum Core, Wirewound
Operating Temperature
-40°C ~ 125°C
DC Resistance (DCR)
40mOhm Max
Q @ Freq
-
Frequency - Self Resonant
-
Ratings
-
Current - Saturation (Isat)
4.7A
Material - Core
Iron Powder
Inductance Frequency - Test
1 MHz
Supplier Device Package
2520
Height - Seated (Max)
0.047" (1.20mm)
Inductance
1 µH
Current Rating (Amps)
3.3 A
  • 精選品牌
    • Samsung
    • ADI
    • Murata11
    • Amphenol
    • Roving
    • Walsin
    • Panasonic
    • TE
    • United-Chemi-Con
    • Molex
    • Nichicon
    • Microchip
    • Bourns
    • ROHM
    • AVX
    • Catalyst
    • ST
    • NXP
    • Vishay
    • KEMET
    • TDK
    • FTDI
    • HARTING
    • Mean Well
    • BroadcomLimited
    • Eaton
    • Microsemi
    • Atmel
    • JST
    • Agilent
      • 資訊中心