2N7002-G
- 型號描述:
- 2N7002 Series 60 V 115 mA 7.5 Ohm N-Channel Enhancement-Mode Vertical DMOS FETs
Power Field-Effect Transistor, 0.25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 型號:
- 2N7002-G
- 品牌:
- Microchip
- 交期:
- 10-15工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$28.288 |
| 25+ | NT$23.868 |
| 100+ | NT$21.658 |
| 1000+ | NT$18.122 |
| 5000+ | NT$16.354 |
起訂量：1倍增量：1
價格:NT$28.288數量:
合計:NT$28
- Series
- -
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Rds On (Max) @ Id, Vgs
- 7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 50pF @ 25V
- FET Feature
- -
- Power Dissipation (Max)
- 200mW (Ta)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- TO-236
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Base Part Number
- 2N7002
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