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Jan2N6052
影像僅供參考,以產品規格為準

Jan2N6052

型號描述:
Bipolar (BJT) Transistor PNP - Darlington 100 V 12 A 150 W Through Hole TO-3 (TO-204AA)
Darlington 電晶體 Power BJT
型號:
Jan2N6052
品牌:
Microchip / Microsemi
交期:
5-8工作天
原廠包裝量:
1
起訂量:100倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Bulk
Package / Case
TO-3
Mounting Type
Through Hole
Transistor Type
PNP - Darlington
Operating Temperature
-55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 6A, 3V
Frequency - Transition
-
Supplier Device Package
TO-3 (TO-204AA)
Grade
Military
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Power - Max
150 W
Qualification
MIL-PRF-19500/501
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