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Jantx2N3810U
影像僅供參考,以產品規格為準

Jantx2N3810U

型號描述:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
雙極結晶體管 - BJT Dual Small-Signal BJT
型號:
Jantx2N3810U
品牌:
Microchip / Microsemi
交期:
5-8工作天
原廠包裝量:
1
起訂量:100倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Bulk
Package / Case
TO-78-6 Metal Can
Mounting Type
Through Hole
Transistor Type
2 PNP (Dual)
Operating Temperature
-65°C ~ 200°C (TJ)
Power - Max
350mW
Current - Collector (Ic) (Max)
50mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 1mA, 5V
Frequency - Transition
-
Supplier Device Package
TO-78-6
Grade
Military
Qualification
MIL-PRF-19500/336
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