VP0109N3-G
- 型號描述:
- MOSFET, P-CHANNEL ENHANCEMENT-MODE, -90V, 8.0 Ohm 3 TO-92 BAG RoHS Compliant: Yes
- 型號:
- VP0109N3-G
- 品牌:
- Microchip
- 交期:
- 7-12工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$26.9555 |
| 10+ | NT$20.449 |
| 50+ | NT$18.8435 |
| 100+ | NT$17.2803 |
| 200+ | NT$16.7733 |
起訂量：1倍增量：1
價格:NT$26.9555數量:
合計:NT$27
- Series
- -
- Packaging
- Bulk
- Part Status
- Active
- FET Type
- P-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 90V
- Current - Continuous Drain (Id) @ 25°C
- 250mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Rds On (Max) @ Id, Vgs
- 8Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 60pF @ 25V
- FET Feature
- -
- Power Dissipation (Max)
- 1W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-92-3
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
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