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首頁 > Microchip代理商 > VP2206N3-G
VP2206N3-G
影像僅供參考,以產品規格為準

VP2206N3-G

型號描述:
Mosfet; P-channel Enhancement-mode; -60V; 0.9 OHM3 TO-92BAG
Mosfet; P-channel Enhancement-mode; -60V; 0.9 OHM3 TO-92BAG
型號:
VP2206N3-G
品牌:
Microchip
交期:
7-10工作天
原廠包裝量:
1+NT$90.0137
3+NT$79.5359
10+NT$67.6293
100+NT$61.4379
起訂量:1倍增量:1
價格:NT$90.0137數量:

合計:NT$90

Series
-
Packaging
Bulk
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 10mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 25V
FET Feature
-
Power Dissipation (Max)
740mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
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