BS170
- 型號描述:
- This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product ha
- 型號:
- BS170
- 品牌:
- ON Semiconductor
- 交期:
- 10-18工作天
- 原廠包裝量:
- 10000
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$5.2 |
| 25+ | NT$4.68 |
| 100+ | NT$4.68 |
| 500+ | NT$4.16 |
| 1000+ | NT$4.16 |
起訂量：1倍增量：1
價格:NT$5.2數量:
合計:NT$5
- Packaging
- Bulk
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- FET Type
- N-Channel
- Current - Continuous Drain (Id) @ 25°C
- 500mA (Ta)
- Rds On (Max) @ Id, Vgs
- 5Ohm @ 200mA, 10V
- FET Feature
- -
- Power Dissipation (Max)
- 830mW (Ta)
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Supplier Device Package
- TO-92-3
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60 V
- Input Capacitance (Ciss) (Max) @ Vds
- 40 pF @ 10 V
- 精選品牌
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- PZS51A5V1CS_R1_00001
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- 10169891-453001SLF
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- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
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