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EFC3J018NUZTDG
影像僅供參考,以產品規格為準

EFC3J018NUZTDG

型號描述:
MOSFET PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
型號:
EFC3J018NUZTDG
品牌:
ON Semiconductor
交期:
5-8工作天
原廠包裝量:
1+NT$28.3238
10+NT$23.8875
100+NT$18.3593
500+NT$16.2435
起訂量:1倍增量:1
價格:NT$28.3238數量:

合計:NT$28

Series
-
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
23A (Ta)
Rds On (Max) @ Id, Vgs
4.7mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2.5W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-XFBGA, WLCSP
Supplier Device Package
6-WLCSP (1.77x3.05)
Base Part Number
EFC3J018
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