我的購物車0
購物車中還沒有商品,趕快選購吧!
NDT451AN
影像僅供參考,以產品規格為準

NDT451AN

型號描述:
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th
型號:
NDT451AN
品牌:
ON Semiconductor
交期:
6-9工作天
原廠包裝量:
1+NT$39.1498
10+NT$33.4589
25+NT$33.4339
100+NT$25.9584
250+NT$25.9459
500+NT$23.0339
1000+NT$18.3539
3000+NT$16.5194
6000+NT$16.3114
起訂量:1倍增量:1
價格:NT$39.1498數量:

合計:NT$39

Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage [Gate to Source]
-20.0 V to 20.0 V
Case/Package
SOT-223
Current Rating
7.10 A
Continuous Drain Current (Ids)
7.20 A
Lead-Free Status
Lead Free
Lifecycle Status
Active
Mounting Style
Surface Mount
Operating Temperature
150 °C (max)
Packaging
Cut Tape (CT)
Number of Pins
4
Polarity
N-Channel
Power Dissipation
3.00 W
Drain to Source Resistance (on) (Rds)
30.0 mΩ
REACH SVHC Compliance
No SVHC
環保標示
Compliant
Drain to Source Voltage (Vds)
30.0 V
Voltage Rating (DC)
30.0 V
  • 精選品牌
    • Samsung
    • ADI
    • Murata11
    • Amphenol
    • Roving
    • Walsin
    • Panasonic
    • TE
    • United-Chemi-Con
    • Molex
    • Nichicon
    • Microchip
    • Bourns
    • ROHM
    • AVX
    • Catalyst
    • ST
    • NXP
    • Vishay
    • KEMET
    • TDK
    • FTDI
    • HARTING
    • Mean Well
    • BroadcomLimited
    • Eaton
    • Microsemi
    • Atmel
    • JST
    • Agilent
      • 資訊中心