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BSM400D12P3G002
影像僅供參考,以產品規格為準

BSM400D12P3G002

型號描述:
MOSFET模組 358A 1200V HALF BRIDGE SIC
型號:
BSM400D12P3G002
品牌:
ROHM Semiconductor
交期:
5-8工作天
原廠包裝量:
4
1+NT$40787.565
起訂量:1倍增量:1
價格:NT$40787.565數量:

合計:NT$40788

Packaging
Bulk
Package / Case
Module
Mounting Type
Chassis Mount
Configuration
2 N-Channel (Half Bridge)
Operating Temperature
-40°C ~ 150°C (TJ)
Technology
Silicon Carbide (SiC)
Power - Max
1570W (Tc)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
400A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
17000pF @ 10V
Rds On (Max) @ Id, Vgs
-
Gate Charge (Qg) (Max) @ Vgs
-
FET Feature
-
Vgs(th) (Max) @ Id
5.6V @ 109.2mA
Supplier Device Package
Module
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