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R6086YNZC17
影像僅供參考,以產品規格為準

R6086YNZC17

型號描述:
N-Channel 600 V 33A (Tc) 114W (Tc) Through Hole TO-3PF
MOSFET Nch 600V 33A, TO-3PF, Power MOSFET: R6086YNZ is a power MOSFET with low on - resistance, suitable for switching.
型號:
R6086YNZC17
品牌:
ROHM Semiconductor
交期:
5-8工作天
原廠包裝量:
300
1+NT$393.8025
10+NT$361.0425
起訂量:1倍增量:1
價格:NT$393.8025數量:

合計:NT$394

Packaging
Tube
Package / Case
TO-3P-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Rds On (Max) @ Id, Vgs
44mOhm @ 17A, 12V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Vgs(th) (Max) @ Id
6V @ 4.6mA
Supplier Device Package
TO-3PF
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5100 pF @ 100 V
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