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CIGW252012GM2R2MNE
- 型號描述:
- 2.2 μH Shielded Drum Core, Wirewound Inductor 1008 (2520 Metric)
功率電感器 - SMD CIGW,Wire wound,1008,2.2uH,1.2?,7 embossed,-20 20%
- 型號:
- CIGW252012GM2R2MNE
- 品牌:
- Samsung Electro-Mechanics
- 交期:
- 5-8工作天
- 原廠包裝量:
- 2500
- Packaging
- Tape & Reel (TR)
- Tolerance
- ±20%
- Features
- -
- Package / Case
- 1008 (2520 Metric)
- Size / Dimension
- 0.098" L x 0.079" W (2.50mm x 2.00mm)
- Mounting Type
- Surface Mount
- Shielding
- Shielded
- Type
- Drum Core, Wirewound
- Operating Temperature
- -40°C ~ 125°C
- DC Resistance (DCR)
- -
- Q @ Freq
- -
- Frequency - Self Resonant
- -
- Ratings
- -
- Current - Saturation (Isat)
- -
- Material - Core
- Metal Composite
- Inductance Frequency - Test
- 1 MHz
- Supplier Device Package
- 1008 (2520 Metric)
- Height - Seated (Max)
- -
- Inductance
- 2.2 µH
- 精選品牌
- 熱銷產品
- MAX25222CATJ/V+
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- LT1211CS8#PBF
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- 3365/50 300
- SR731JTTDR365F
- WR06W2R20FTL
- MAX3221EEUE+
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- MP173AGS-Z
- DDZ12C-7
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- EGG.2B.665.ZZM
- PA2512FKF7W7U5E
- RT0603FRE07147RL
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- 20374-R30E-31
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- 12.87160
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- ACS732KLATR-75AB-T
- RT0603FRE07499RL
- 0541323662
- C3216X5R1H335K160AB
- D2FC-F-7N(100M)
- 7M-25.000MAKV-T
- BM05B-ADHKS-GAN-ETB(HF)
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