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CSD25310Q2T
影像僅供參考,以產品規格為準

CSD25310Q2T

型號描述:
-20-V, P channel NexFET? power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm 6-WSON -55 to 150
-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm 6-WSON -55 to 150
型號:
CSD25310Q2T
品牌:
Texas Instruments
交期:
6-9工作天
原廠包裝量:
1+NT$37.479
100+NT$25.467
250+NT$19.656
1000+NT$13.065
起訂量:1倍增量:1
價格:NT$37.479數量:

合計:NT$37

Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
23.9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.7nC @ 4.5V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
655pF @ 10V
FET Feature
-
Power Dissipation (Max)
2.9W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WSON (2x2)
Package / Case
6-WDFN Exposed Pad
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