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2SK3566(STA4,Q,M)
影像僅供參考,以產品規格為準

2SK3566(STA4,Q,M)

型號描述:
N-Channel 900 V 2.5A (Ta) 40W (Tc) Through Hole TO-220SIS
MOSFET N-CH 900V 2.5A TO220SIS
型號:
2SK3566(STA4,Q,M)
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$64.6815
50+NT$31.434
100+NT$28.1848
500+NT$22.485
1000+NT$20.6521
2000+NT$19.111
5000+NT$18.2106
起訂量:1倍增量:1
價格:NT$64.6815數量:

合計:NT$65

Packaging
Tube
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Rds On (Max) @ Id, Vgs
6.4Ohm @ 1.5A, 10V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Vgs(th) (Max) @ Id
4V @ 1mA
Supplier Device Package
TO-220SIS
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
900 V
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Qualification
-
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