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TK8A60W,S4VX
影像僅供參考,以產品規格為準

TK8A60W,S4VX

型號描述:
N-Channel 600 V 8A (Ta) 30W (Tc) Through Hole TO-220SIS
MOSFET N-CH 600V 8A TO220SIS
型號:
TK8A60W,S4VX
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$98.8358
50+NT$49.6355
100+NT$44.8599
500+NT$36.481
1000+NT$33.7891
2000+NT$32.4919
起訂量:1倍增量:1
價格:NT$98.8358數量:

合計:NT$99

Packaging
Tube
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 10V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Vgs(th) (Max) @ Id
3.7V @ 400µA
Supplier Device Package
TO-220SIS
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 300 V
Qualification
-
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