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SI2337DS-T1-E3
影像僅供參考,以產品規格為準

SI2337DS-T1-E3

型號描述:
MOSFET -80V Vds 20V Vgs SOT-23
型號:
SI2337DS-T1-E3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
1+NT$22.5225
10+NT$21.0893
100+NT$16.7554
500+NT$15.1174
1000+NT$14.2643
3000+NT$12.7969
6000+NT$12.3874
24000+NT$12.3533
起訂量:1倍增量:1
價格:NT$22.5225數量:

合計:NT$23

Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
500pF @ 40V
FET Feature
-
Power Dissipation (Max)
760mW (Ta), 2.5W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
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