SiSS5623DN-T1-GE3
- 型號描述:
- P-Channel 60 V 10.5A (Ta), 36.3A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET P-Channel 60 V (D-S) MOSFET PowerPAK 1212-8S, 24 mohm a. 10V, 46 mohm a. 4.5V
- 型號:
- SiSS5623DN-T1-GE3
- 品牌:
- Vishay / Siliconix
- 交期:
- 5-8工作天
- 原廠包裝量:
- 3000
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$77.5483 |
| 10+ | NT$51.8148 |
| 100+ | NT$36.166 |
| 500+ | NT$29.1762 |
| 1000+ | NT$26.9854 |
| 3000+ | NT$24.5512 |
起訂量：1倍增量：1
價格:NT$77.5483數量:
合計:NT$78
- Packaging
- Tape & Reel (TR)
- Package / Case
- PowerPAK® 1212-8S
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- FET Type
- P-Channel
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Ta), 36.3A (Tc)
- Rds On (Max) @ Id, Vgs
- 24mOhm @ 10A, 10V
- FET Feature
- -
- Power Dissipation (Max)
- 4.8W (Ta), 56.8W (Tc)
- Vgs(th) (Max) @ Id
- 2.6V @ 250µA
- Supplier Device Package
- PowerPAK® 1212-8S
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60 V
- Gate Charge (Qg) (Max) @ Vgs
- 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1575 pF @ 30 V
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- RG2012P-101-B-T5
- EC350V-04P
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