C3M0120090J
- 型號描述:
- MOSFET G3 SiC MOSFET 900V, 120 mOhm
- 型號:
- C3M0120090J
- 品牌:
- Wolfspeed
- 交期:
- 5-8工作天
- 原廠包裝量:
- 50
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$402.675 |
| 10+ | NT$363.7725 |
| 50+ | NT$346.71 |
| 100+ | NT$300.9825 |
| 250+ | NT$287.6738 |
| 500+ | NT$262.08 |
| 1000+ | NT$228.2963 |
起訂量：1倍增量：1
價格:NT$402.675數量:
合計:NT$403
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 900V
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Rds On (Max) @ Id, Vgs
- 155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id
- 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs
- 17.3nC @ 15V
- Vgs (Max)
- +18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds
- 350pF @ 600V
- FET Feature
- -
- Power Dissipation (Max)
- 83W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- D2PAK-7
- Package / Case
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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