- Packaging
- Tube
- Part Status
- Obsolete
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs
- 68nC @ 10V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 1.645pF @ 25V
- FET Feature
- -
- Power Dissipation (Max)
- 39W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220FP
- Package / Case
- TO-220-3 Full Pack
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- ON Semiconductor
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