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首頁 > onsemi代理商 > NSVMMUN2132LT1G-M01
NSVMMUN2132LT1G-M01
影像僅供參考,以產品規格為準

NSVMMUN2132LT1G-M01

型號描述:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
onsemi
型號:
NSVMMUN2132LT1G-M01
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Bulk
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Transistor Type
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 5mA, 10V
Supplier Device Package
SOT-23-3 (TO-236)
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Power - Max
246 mW
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
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