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首頁 > onsemi代理商 > NTMT045N065SC1
NTMT045N065SC1
影像僅供參考,以產品規格為準

NTMT045N065SC1

型號描述:
N-Channel 650 V 55A (Tc) 187W (Tc) Surface Mount 4-TDFN (8x8)
SILICON CARBIDE (SIC) MOSFET - 3
型號:
NTMT045N065SC1
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
3000+NT$225.9089
起訂量:3000倍增量:1
價格:NT$225.9089數量:

合計:NT$677727

Packaging
Tape & Reel (TR)
Package / Case
4-PowerTSFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Rds On (Max) @ Id, Vgs
50mOhm @ 25A, 18V
FET Feature
-
Power Dissipation (Max)
187W (Tc)
Vgs(th) (Max) @ Id
4.3V @ 8mA
Supplier Device Package
4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Vgs (Max)
+22V, -8V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 325 V
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