- Part Status
- Active
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200V
- Current - Continuous Drain (Id) @ 25°C
- 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id
- 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs
- 203nC @ 20V
- Vgs (Max)
- +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds
- 2890pF @ 800V
- FET Feature
- -
- Power Dissipation (Max)
- 535W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-3
- Package / Case
- TO-247-3 Variant
- 精選品牌
- 熱銷產品
- MAX25222CATJ/V+
- MAX25220ATJ/V+
- TLV9041IDBVR
- WP26DK-P040VA3-R15000
- PPM-2-5525-SG-WT
- R2016-40.000-10-F-1010-EXT-TR-NS1
- PIC16F17146-I/P
- IL-G-12P-S3L2-SA
- LT1211CS8#PBF
- TZX5V1A-TR
- 3365/50 300
- SR731JTTDR365F
- WR06W2R20FTL
- MAX3221EEUE+
- TPS2557DRBT
- MP173AGS-Z
- DDZ12C-7
- RC0402DR-07240RL
- B66305G0000X187
- OD3510-05MB
- E-701
- AD7880BN
- EGG.2B.665.ZZM
- PA2512FKF7W7U5E
- RT0603FRE07147RL
- MS27473E12F4S
- MEASP105CC6226MF1A01
- 20374-R30E-31
- 20374-R30E-31
- FPR2A-0R01F1
- TPS923653DMTR
- 12.87160
- TLVH432BIDBZR
- ACS732KLATR-75AB-T
- RT0603FRE07499RL
- 0541323662
- C3216X5R1H335K160AB
- D2FC-F-7N(100M)
- 7M-25.000MAKV-T
- BM05B-ADHKS-GAN-ETB(HF)
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