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首頁 > Cree代理商 > C2M0025120D
C2M0025120D
影像僅供參考,以產品規格為準

C2M0025120D

型號描述:
SILICON CARBIDE POWER TRANSISTORS/MODULES
型號:
C2M0025120D
品牌:
Cree
交期:
5-8工作天
原廠包裝量:
1+NT$2381.925
10+NT$2381.925
50+NT$2381.925
100+NT$2290.47
1000+NT$2290.47
10000+NT$2290.47
起訂量:1倍增量:1
價格:NT$2381.925數量:

合計:NT$2382

Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
463W (Tc)
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
2788pF @ 1000V
Vgs (Max)
+25V, -10V
Gate Charge (Qg) (Max) @ Vgs
161nC @ 20V
Vgs(th) (Max) @ Id
2.4V @ 10mA
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Drive Voltage (Max Rds On, Min Rds On)
20V
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