C2M0040120D
- 型號描述:
- SILICON CARBIDE POWER TRANSISTORS/MODULES
- 型號:
- C2M0040120D
- 品牌:
- Cree
- 交期:
- 5-8工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$1164.345 |
| 10+ | NT$1164.345 |
| 50+ | NT$1164.345 |
| 100+ | NT$1119.6413 |
| 1000+ | NT$1119.6413 |
| 10000+ | NT$1119.6413 |
起訂量：1倍增量：1
價格:NT$1164.345數量:
合計:NT$1164
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200V
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Rds On (Max) @ Id, Vgs
- 52mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id
- 2.8V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs
- 115nC @ 20V
- Vgs (Max)
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1893pF @ 1000V
- FET Feature
- -
- Power Dissipation (Max)
- 330W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-3
- Package / Case
- TO-247-3
- 精選品牌
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