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GS61008P-MR
影像僅供參考,以產品規格為準

GS61008P-MR

型號描述:
氮化鎵場效應管 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled
型號:
GS61008P-MR
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
250
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Tape & Reel (TR)
Package / Case
5-SMD, No Lead
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Technology
GaNFET (Gallium Nitride)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Rds On (Max) @ Id, Vgs
9.5mOhm @ 27A, 6V
FET Feature
-
Power Dissipation (Max)
-
Vgs(th) (Max) @ Id
2.6V @ 7mA
Supplier Device Package
-
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
6V
Vgs (Max)
+7V, -10V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 50 V
Qualification
-
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