IPB019N08N5ATMA1
- 型號描述:
- N-Channel 80 V 180A (Tc) 224W (Tc) Surface Mount PG-TO263-7
MOSFET N-CH 80V 180A TO263-7
- 型號:
- IPB019N08N5ATMA1
- 品牌:
- Infineon Technologies
- 交期:
- 5-8工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$175.0028 |
| 10+ | NT$117.2126 |
| 100+ | NT$84.4487 |
| 500+ | NT$70.4756 |
起訂量：1倍增量：1
價格:NT$175.0028數量:
合計:NT$175
- Packaging
- Tape & Reel (TR)
- Package / Case
- TO-263-7, D2PAK (6 Leads + Tab)
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- FET Type
- N-Channel
- Current - Continuous Drain (Id) @ 25°C
- 180A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.95mOhm @ 100A, 10V
- FET Feature
- -
- Power Dissipation (Max)
- 224W (Tc)
- Vgs(th) (Max) @ Id
- 3.8V @ 154µA
- Supplier Device Package
- PG-TO263-7
- Grade
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 80 V
- Gate Charge (Qg) (Max) @ Vgs
- 123 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 8970 pF @ 40 V
- Qualification
- -
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- EC350V-04P
- NUCLEO-C071RB
- MAX5362LEUK+T
- 猜你喜歡
- IPB017N10N5LF
- IPB021N10NM5LF2ATMA1
- IPBT-108-H1-T-S-RA-GP
- IPBT-108-H2-T-D-GP
- IPBT-108-H1-T-S-GP
- IPB040N08NF2SATMA1
- IPB022N12NM6ATMA1
- IPB029N15NM6ATMA1
- IPB015N06NF2SATMA1
- IPB180N04S401ATMA1
- IPB014N04NF2SATMA1
- IPB47N10SL26ATMA1
- IPB339N20NM6ATMA1
- IPB072N15N3GE818XT
- IPB068N20NM6ATMA1
- IPBS-108-02-T-S
- IPBS-108-02-T-S-GP
- IPBS-108-02-T-D-GP
- IPBS-108-02-T-D
- IPBS-108-01-T-S
- IPBS-108-01-TM-D
- IPBS-108-01-T-S-GP
- IPBD-04-S-K-M
- IPBD-04-S-K
- IPB044N15N5
- IPB120N04S401ATMA1
- IPB100N06S2L05ATMA1
- IPB100N06S2L-05
- IPB050N10NF2SATMA1
- IPB026N10NF2SATMA1
- IPB120N06S4H1ATMA1
- IPB120N06S4-H1
- IPB100N08S207ATMA1
- IPB80P03P4L07ATMA2
- IPBS-105-01-T-S-GP
- IPBS-105-01-T-S
- IPBD-08-D-K-M
- IPBT-108-H1-T-D-RA-GP
- IPBT-108-H1-T-S-RA-K
- IPBT-108-H1-T-D-GP
- 資訊中心
- onsemi 推出基於第七代 IGBT 的智慧功率模組，以降低加熱和冷卻能耗
- 2024-03-16
- Samtec 開設新台灣設計中心
- 2023-11-13
- TI 利用 SiC 柵極驅動器幫助最大限度地提高電動汽車的行駛里程
- 2023-08-12
- TDK 為 ADAS/AD 電源管理提供極其緊湊和可靠的 CLT 功率電感器
- 2022-08-13
- 意法半導體觸控控制器支持新一代AMOLED節能顯示器
- 2022-07-03
- ADI 公司的無線電池管理系統獲得頂級汽車網絡安全認證
- 2022-04-09
- 通過 Samtec 和 SnapEDA 提供 20 萬多個互連符號和封裝
- 2021-11-13
- TE Connectivity 的新型可插拔連接器滿足了照明應用的市場需求
- 2021-07-04
- 意法半導體的低電容汽車瞬態電壓抑制器為高速接口提供保護
- 2021-05-30
- ROHM新型600V IGBT IPM提供領先的低噪聲，低損耗
- 2021-05-08
- Littelfuse收購Hartland Controls
- 2021-04-05
- Molex推出了汽車主動降噪中的重大傳感器創新，以改善安全性和駕駛體驗
- 2021-02-24
