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IPI65R190C6XKSA1
影像僅供參考,以產品規格為準

IPI65R190C6XKSA1

型號描述:
MOSFET
型號:
IPI65R190C6XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Tube
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 7.3A, 10V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Vgs(th) (Max) @ Id
3.5V @ 730µA
Supplier Device Package
PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1620 pF @ 100 V
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