IPI65R190CFDXKSA2
- 型號描述:
- MOSFET HIGH POWER_LEGACY
- 型號:
- IPI65R190CFDXKSA2
- 品牌:
- Infineon Technologies
- 交期:
- 5-8工作天
- 原廠包裝量:
- 500
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$120.4613 |
| 10+ | NT$101.01 |
| 25+ | NT$95.55 |
| 100+ | NT$81.9 |
| 250+ | NT$77.1225 |
| 500+ | NT$72.6863 |
| 1000+ | NT$66.2025 |
| 2500+ | NT$64.4963 |
| 5000+ | NT$63.1313 |
起訂量：1倍增量：1
價格:NT$120.4613數量:
合計:NT$120
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs
- 68nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1850pF @ 100V
- FET Feature
- -
- Power Dissipation (Max)
- 151W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO262-3
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- 精選品牌
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