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RQ3E120ATTB
影像僅供參考,以產品規格為準

RQ3E120ATTB

型號描述:
MOSFET HSMT8 P CHAN 30V
型號:
RQ3E120ATTB
品牌:
ROHM Semiconductor
交期:
5-8工作天
原廠包裝量:
3000
1+NT$30.7125
10+NT$24.1264
100+NT$16.0388
500+NT$12.6263
1000+NT$11.2271
3000+NT$9.4868
6000+NT$9.0431
9000+NT$8.4971
起訂量:1倍增量:1
價格:NT$30.7125數量:

合計:NT$31

Packaging
Tape & Reel (TR)
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Rds On (Max) @ Id, Vgs
8mOhm @ 12A, 10V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Vgs(th) (Max) @ Id
2.5V @ 1mA
Supplier Device Package
8-HSMT (3.2x3)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 15 V
Qualification
-
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