SUD09P10-195-GE3
- 型號描述:
- P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252, (D-Pak)
MOSFET -100V 195mOhms@ 10V -8.8A
- 型號:
- SUD09P10-195-GE3
- 品牌:
- Vishay Semiconductors
- 交期:
- 5-8工作天
- 原廠包裝量:
- 2000
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$28.3238 |
| 10+ | NT$23.2733 |
| 100+ | NT$18.1204 |
| 500+ | NT$15.3563 |
| 1000+ | NT$12.5239 |
| 2000+ | NT$11.739 |
| 4000+ | NT$11.193 |
| 10000+ | NT$10.6811 |
| 24000+ | NT$10.647 |
起訂量：1倍增量：1
價格:NT$28.3238數量:
合計:NT$28
- Packaging
- Tape & Reel (TR)
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- FET Type
- P-Channel
- Current - Continuous Drain (Id) @ 25°C
- 8.8A (Tc)
- Rds On (Max) @ Id, Vgs
- 195mOhm @ 3.6A, 10V
- FET Feature
- -
- Power Dissipation (Max)
- 2.5W (Ta), 32.1W (Tc)
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Supplier Device Package
- TO-252AA
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100 V
- Gate Charge (Qg) (Max) @ Vgs
- 34.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1055 pF @ 50 V
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- EC350V-04P
- NUCLEO-C071RB
- MAX5362LEUK+T
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- SUD08P06-155L-GE3
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