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SUD09P10-195-GE3
影像僅供參考,以產品規格為準

SUD09P10-195-GE3

型號描述:
P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252, (D-Pak)
MOSFET -100V 195mOhms@ 10V -8.8A
型號:
SUD09P10-195-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
2000
1+NT$28.3238
10+NT$23.2733
100+NT$18.1204
500+NT$15.3563
1000+NT$12.5239
2000+NT$11.739
4000+NT$11.193
10000+NT$10.6811
24000+NT$10.647
起訂量:1倍增量:1
價格:NT$28.3238數量:

合計:NT$28

Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
195mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34.8nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1055pF @ 50V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 32.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252, (D-Pak)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
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