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SUD19P06-60-GE3
影像僅供參考,以產品規格為準

SUD19P06-60-GE3

型號描述:
MOSFET 60V 19A 38.5W 60mohm @ 10V
型號:
SUD19P06-60-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
2000
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 25V
FET Feature
-
Power Dissipation (Max)
2.3W (Ta), 38.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252, (D-Pak)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
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