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NJVMJD112G
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NJVMJD112G

型號描述:
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK
Darlington 電晶體 20 A, 100 V NPN Darlington Bipolar Power Transistor
型號:
NJVMJD112G
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
75
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Power - Max
1.75W
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Current - Collector Cutoff (Max)
20µA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
2A
Transistor Type
NPN - Darlington
Part Status
Active
Packaging
Tube
Series
-
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