NJVMJD112T4G
- 型號描述:
- Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount DPAK
Darlington 電晶體 BIP DPAK NPN 2A 100V TR
- 型號:
- NJVMJD112T4G
- 品牌:
- onsemi
- 交期:
- 5-8工作天
- 原廠包裝量:
- 2500
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$19.11 |
| 10+ | NT$17.3355 |
| 100+ | NT$14.1278 |
| 500+ | NT$11.9096 |
| 1000+ | NT$10.92 |
| 2500+ | NT$9.7939 |
| 5000+ | NT$8.9066 |
起訂量：1倍增量：1
價格:NT$19.11數量:
合計:NT$19
- Series
- -
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Transistor Type
- NPN - Darlington
- Current - Collector (Ic) (Max)
- 2A
- Voltage - Collector Emitter Breakdown (Max)
- 100V
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 40mA, 4A
- Current - Collector Cutoff (Max)
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 2A, 3V
- Power - Max
- 20W
- Frequency - Transition
- 25MHz
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- DPAK
- Base Part Number
- MJD112
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