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NXH003P120M3F2PTHG
影像僅供參考,以產品規格為準

NXH003P120M3F2PTHG

型號描述:
離散半導體模組 1200V 3M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
型號:
NXH003P120M3F2PTHG
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
20
1+NT$8358.5775
10+NT$7828.6163
20+NT$7534.1175
起訂量:1倍增量:1
價格:NT$8358.5775數量:

合計:NT$8359

Packaging
Tray
Package / Case
Module
Mounting Type
Chassis Mount
Configuration
2 N-Channel (Half Bridge)
Operating Temperature
-40°C ~ 175°C (TJ)
Technology
Silicon Carbide (SiC)
Power - Max
979W (Tc)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
350A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
20889pF @ 800V
Rds On (Max) @ Id, Vgs
5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs
1195nC @ 20V
FET Feature
Standard
Vgs(th) (Max) @ Id
4.4V @ 160mA
Supplier Device Package
36-PIM (56.7x62.8)
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