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NXH100B120H3Q0PTG
影像僅供參考,以產品規格為準

NXH100B120H3Q0PTG

型號描述:
IGBT 模組 Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM
型號:
NXH100B120H3Q0PTG
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
24
1+NT$1748.565
24+NT$1748.2238
起訂量:1倍增量:1
價格:NT$1748.565數量:

合計:NT$1749

Series
-
Packaging
Tray
Part Status
Active
IGBT Type
Trench Field Stop
Configuration
2 Independent
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
50A
Power - Max
186W
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 50A
Current - Collector Cutoff (Max)
200µA
Input Capacitance (Cies) @ Vce
9.075nF @ 20V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
22-PIM (55x32.5)
Base Part Number
NXH100
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