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HGTG11N120CND
影像僅供參考,以產品規格為準

HGTG11N120CND

型號描述:
IGBT 電晶體 43A 1200V NCh w/Anti Parallel Hyprfst Dde
型號:
HGTG11N120CND
品牌:
ON Semiconductor / Fairchild
交期:
5-8工作天
原廠包裝量:
1+NT$113.9775
10+NT$96.915
100+NT$83.9475
250+NT$79.5113
起訂量:1倍增量:1
價格:NT$113.9775數量:

合計:NT$114

Series
-
Packaging
Tube
Part Status
Not For New Designs
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
43A
Current - Collector Pulsed (Icm)
80A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 11A
Power - Max
298W
Switching Energy
950µJ (on), 1.3mJ (off)
Input Type
Standard
Gate Charge
100nC
Td (on/off) @ 25°C
23ns/180ns
Test Condition
960V, 11A, 10Ohm, 15V
Reverse Recovery Time (trr)
70ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
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