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HGTG10N120BND
影像僅供參考,以產品規格為準

HGTG10N120BND

型號描述:
IGBT 電晶體 35A 1200V N-Ch
型號:
HGTG10N120BND
品牌:
onsemi / Fairchild
交期:
5-8工作天
原廠包裝量:
450
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Series
-
Packaging
Tube
Part Status
Not For New Designs
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
35A
Current - Collector Pulsed (Icm)
80A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298W
Switching Energy
850µJ (on), 800µJ (off)
Input Type
Standard
Gate Charge
100nC
Td (on/off) @ 25°C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)
70ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
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