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HGT1S10N120BNST
影像僅供參考,以產品規格為準

HGT1S10N120BNST

型號描述:
IGBT 電晶體 N-Channel IGBT NPT Series 1200V
型號:
HGT1S10N120BNST
品牌:
onsemi / Fairchild
交期:
5-8工作天
原廠包裝量:
800
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Series
-
Packaging
Tape & Reel (TR)
Part Status
Active
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
35A
Current - Collector Pulsed (Icm)
80A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298W
Switching Energy
320µJ (on), 800µJ (off)
Input Type
Standard
Gate Charge
100nC
Td (on/off) @ 25°C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB
Base Part Number
HGT1S10N120
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