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首頁 > onsemi代理商 > NTH4L020N120SC1
NTH4L020N120SC1
影像僅供參考,以產品規格為準

NTH4L020N120SC1

型號描述:
碳化矽MOSFET SIC MOS TO247-4L 20MOHM 1200V
型號:
NTH4L020N120SC1
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
30
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
220nC @ 20V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
2943pF @ 800V
FET Feature
-
Power Dissipation (Max)
510W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Part Number
NTH4L020
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