NTH4L160N120SC1
- 型號描述:
- 碳化矽MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
- 型號:
- NTH4L160N120SC1
- 品牌:
- onsemi
- 交期:
- 5-8工作天
- 原廠包裝量:
- 30
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$227.955 |
| 10+ | NT$227.2725 |
| 30+ | NT$191.4413 |
| 120+ | NT$180.8625 |
| 270+ | NT$180.5213 |
| 510+ | NT$153.9038 |
| 1020+ | NT$150.4913 |
| 2520+ | NT$150.15 |
起訂量：1倍增量：1
價格:NT$227.955數量:
合計:NT$228
- Input Capacitance (Ciss) (Max) @ Vds
- 665pF @ 800V
- FET Feature
- -
- Power Dissipation (Max)
- 111W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-4L
- Package / Case
- TO-247-4
- Base Part Number
- NTH4L160
- Vgs (Max)
- +25V, -15V
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 20V
- Vgs(th) (Max) @ Id
- 4.3V @ 2.5mA
- Rds On (Max) @ Id, Vgs
- 224mOhm @ 12A, 20V
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 17.3A (Tc)
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- SiC (Silicon Carbide Junction Transistor)
- FET Type
- N-Channel
- Part Status
- Active
- Packaging
- Tube
- Series
- -
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