NTHL080N120SC1A
- 型號描述:
- MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
- 型號:
- NTHL080N120SC1A
- 品牌:
- onsemi
- 交期:
- 5-8工作天
- 原廠包裝量:
- 450
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$372.645 |
| 10+ | NT$328.2825 |
| 25+ | NT$263.445 |
| 50+ | NT$262.4213 |
| 100+ | NT$241.9463 |
| 250+ | NT$228.9788 |
| 450+ | NT$226.9313 |
| 900+ | NT$226.59 |
起訂量：1倍增量：1
價格:NT$372.645數量:
合計:NT$373
- Series
- Automotive, AEC-Q101
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)
- 1200V
- Current - Continuous Drain (Id) @ 25°C
- 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id
- 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs
- 56nC @ 20V
- Vgs (Max)
- +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds
- 1670pF @ 800V
- FET Feature
- -
- Power Dissipation (Max)
- 178W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-3
- Package / Case
- TO-247-3
- Base Part Number
- NTHL080
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