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NXH003P120M3F2PTHG
影像僅供參考,以產品規格為準

NXH003P120M3F2PTHG

型號描述:
Mosfet Array 1200V (1.2kV) 350A (Tc) 979W (Tc) Chassis Mount 36-PIM (56.7x62.8)
ELITESIC, 3 MOHM SIC M3S MOSFET,
型號:
NXH003P120M3F2PTHG
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
1+NT$8757.32
20+NT$8202.2655
40+NT$7893.9039
起訂量:1倍增量:1
價格:NT$8757.32數量:

合計:NT$8757

Packaging
Tray
Package / Case
Module
Mounting Type
Chassis Mount
Configuration
2 N-Channel (Half Bridge)
Operating Temperature
-40°C ~ 175°C (TJ)
Technology
Silicon Carbide (SiC)
Power - Max
979W (Tc)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
350A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
20889pF @ 800V
Rds On (Max) @ Id, Vgs
5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs
1195nC @ 20V
FET Feature
Standard
Vgs(th) (Max) @ Id
4.4V @ 160mA
Supplier Device Package
36-PIM (56.7x62.8)
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